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| inchange semiconductor isc product specification isc silicon npn power transistor BU603 description collector-emitter sustaining voltage- : v ceo(sus) = 550v(min) high switching speed applications designed for use in power supplies and deflection circuits for color receivers and monitors absolute maximum rating s (t a =25 ) symbol parameter value unit v ces collector-emitter voltage-v be = 0 1350 v v ceo collector-emitter voltage 550 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 2 a i bm base current-peak 4 a i e emitter current-continuous 7 a i em emitter current-peak 12 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU603 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 550 v v ce (sat)-1 collector-emitter saturation voltage i c = 2a; i b = 0.33a b 2 v v ce (sat)-2 collector-emitter saturation voltage i c = 4a; i b = 1.33a b 3 v i ces collector cutoff current v ce = v cesmax ; v be = 0 v ce = v cesmax ; v be = 0;t j = 125 1 2 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1 ma h fe-1 dc current gain i c = 10ma ; v ce = 5v 6 h fe-2 dc current gain i c = 1a ; v ce = 5v 8 h fe-3 dc current gain i c = 2a ; v ce = 2v 6 h fe-4 dc current gain i c = 4a ; v ce = 3v 3 switching times; resistive load t on turn-on time 0.5 s t s storage time 6.0 s t f fall time i c = 2a; i b1 = -i b2 = 0.33a 0.7 s isc website www.iscsemi.cn |
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